Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors

Simply including either single ferroelectric oxide layer or threshold selector, we can make conventional field effect transistor to have super steep switching characteristic, i.e., sub-60-mV/decade of subthreshold slope. One of the representative is negative capacitance FET (NCFET), in which a ferroelectric layer is added within its gate stack. The other is phase FET (i.e., negative resistance ...

A facile route to Si nanowire gate-all-around field effect transistors with a steep subthreshold slope.

We present a facile CMOS-compatible fabrication of lateral gate-all-around (GAA) field effect transistors (FETs) based on concentric Si-SiO₂/N(++)Si core-multi-shell nanowires (NWs). Si-SiO₂/N(++)Si core-multi-shell NWs were prepared by sequential Si NW growth, thermal oxidation and Si deposition processes in a single chamber. The GAA NW FET was then fabricated using the Si core, SiO₂ inner-she...

Optoelectronic switching of nanowire-based hybrid organic/oxide/semiconductor field-effect transistors

1 Institute for Materials Science and Max Bergmann Center of Biomaterials, TU Dresden, 01062 Dresden, Germany 2 Center for Advancing Electronics Dresden, TU Dresden, 01062 Dresden, Germany 3 Division of IT Convergence Engineering, Pohang University of Science and Technology, Pohang, Korea 4 NaMLab GmbH, Nöthnitzer Strasse 64, 01187 Dresden, Germany 5 Dresden Center for Computational Materials S...

Two Dimensional Electrostrictive Field Effect Transistor (2D-EFET): A sub-60mV/decade Steep Slope Device with High ON current

This article proposes a disruptive device concept which meets both low power and high performance criterion for post-CMOS computing and at the same time enables aggressive channel length scaling. This device, hereafter refer to as two-dimensional electrostrictive field effect transistor or 2D-EFET, allows sub-60 mV/decade subthreshold swing and considerably higher ON current compared to any sta...

Modulating the threshold voltage of oxide nanowire field-effect transistors by Ga ion beam